ERICA 소재부품융합 첨단제조장비 혁신인재 교육연구단
The current record for high-speed organic transistors is held by the vertical organic thin film transistor (VOTFT) due to
very short vertical carrier paths and simple device structures for diverse applications. Electrochemically anodized aluminum oxide
is used in vertical organic permeable base transistor (vertical OPBT) and vertical organic field-effect transistor (VOFET) for
excellent dielectric structures and interface modifications. For the first time we show the successful enhancement of vertical OPBT
with the electrochemically-oxidized base electrode by anodization. Leakage currents and parasitic capacitances are significantly
reduced, paving the way to even the highest transit frequencies amongst the reported organic transistors. For the VOFET,
we use electrochemically-oxidized insulating layer to form the charge blocking layer at the vertically-stacked source-drain interface.
Therefore VOTFTs with low leakage current, high on/off current ratio, high-speed, and low operating voltage are demonstrated with
the electrochemically anodized electrodes.